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| MA4E1310 GaAs Flip Chip Schottky Barrier Diode Rev. V2 Features * * * * * * Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Designed for Easy Circuit Insertion Case Style ODS-1278 Description M/A-COM's MA4E1310 is a gallium arsenide flip chip Schottky barrier diode. This diode is fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. This device is fully passivated with silicon nitride and has an additional layer of polyimide for scratch protection. The protective coatings prevent damage to the junction during automated or manual handling. The flip chip configuration is suitable for pick and place insertion. Applications The high cutoff frequency of this diode allows use through millimeter wave frequencies. Typical applications include single and double balanced mixers in PCN transceivers and radios, police radar detectors, automotive radar detectors, etc. This device can be used through 110 GHz. . 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4E1310 GaAs Flip Chip Schottky Barrier Diode Rev. V2 Electrical Specifications @ + 25 C Parameters and Test Conditions Symbol Units Min. MA4E1310 Typ. Max. Junction Capacitance at 0V at 1 MHz Cj pF .010 Total Capacitance at 0V at 1 MHz1 Ct pF .025 .040 .045 Slope Resistance 2 Rd Ohms 7 9 Forward Voltage at 1mA Vf1 Volts .60 .70 .80 Reverse Breakdown Voltage at @ 10uA Vbr Volts 4.5 7 SSB Noise Figure ( Estimated ) NF dB 6.5 Notes: 1. 2. Total capacitance is equivalent to the sum of junction capacitance Cj and parasitic capacitance Cp. Slope Resistance = ( Vf1 - Vf2) / (10.5mA - 9.5mA) 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4E1310 GaAs Flip Chip Schottky Barrier Diode Rev. V2 Forward Current vs Temperature 100.00 Forward Current (mA) 25C 10.00 1.00 0.10 0.01 +125C - 50C 0.00 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 Forward Voltage (V) Absolute Maximum Ratings 1 Parameter Operating Temperature Storage Temperature Incident LO Power Incident RF Power Mounting Temperature Electrostatic Discharge ( ESD ) Classification 2 Absolute Maximum -65 C to +125 C -65 C to +150 C +20 dBm +20 dBm . +235C for 10 seconds Class 0 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Human Body Model 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4E1310 GaAs Flip Chip Schottky Barrier Diode Rev. V2 Handling Procedures The following precautions should be observed to avoid damaging these chips: Cleanliness: The chips should be handled in a clean environment. Do not attempt to clean die after installation. Static Sensitivity: Schottky barrier diodes are ESD sensitive and can be damaged by static electricity. Proper ESD techniques should be used when handling these devices. General Handling: The protective polymer coating on the active areas of these die provides scratch protection, particularly for the metal air bridge which contacts the anode. Die can be handled with tweezers or vacuum pickups and are suitable for use with automatic pick-and-place equipment. Mounting Techniques This device is designed to be inserted onto hard or soft substrates with the junction side down. It can be mounted with conductive epoxy or with a low temperature solder preform. The die can also be assembled with the junction side up, and wire or ribbon bonds made to the pads. Solder Die Attach: Solder which does not scavenge gold, such as Indalloy # 2, is recommended. Sn-Pb based solders are not recommended due to solder embrittlement. Do not expose die to a temperature greater than 235C, or greater than 200C for longer than 10 seconds. No more than three seconds of scrubbing should be required for attachment. Epoxy Die Attach: Assembly can be preheated to 125 - 150 C. Use a minimum amount of epoxy. Cure epoxy as per manufacturer's schedule. For extended cure times, temperatures should be kept below 200 C. 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4E1310 GaAs Flip Chip Schottky Barrier Diode Rev. V2 Flip Chip Outline Drawing B F E C G A MA4E1310 Case Style 1278 D H DIM. A B C D E F G H INCHES MIN. MAX. 0.013 0.026 0.008 0.007 0.016 0.004 0.006 0.0075 0.014 0.027 0.009 0.008 0.017 0.006 0.007 0.0085 MILLIMETERS MIN. MAX. 0.330 0.660 0.203 0.177 0.406 0.101 0.152 0.190 0.335 0.685 0.228 0.203 0.430 0.152 0.177 0.216 5 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. |
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